The 8th European Conference on Silicon Carbide and Related
Materials
Oslo, Norway. August 29 – September 2, 2010
Announcements
| January |
-
Final announcement and call for abstracts.
|
Important dates
| Final
announcement and call for abstracts: |
January |
Abstract submission deadline:
|
April 12 |
| Notice of acceptance: |
May 21 |
| Registration deadline (reduced fee): |
June 11 |
| Late news deadline: |
July 15 |
Late news, notice of acceptance:
|
July 30 |
Late registration deadline:
|
August 10 |
| Papers submission deadline: |
August 13 |
Scope
The
aim of the conference is to communicate and discuss recent progress in
crystal growth, characterization and control of material properties as
well as other basic research issues concerning silicon carbide (SiC)
and related materials, including graphene and wide bandgap
semiconductors like III-nitrides, diamond and zinc oxide.
New
results relevant to wafer production processes, device fabrication
technologies and device applications are also central to the
conference. The objective is to promote the development and
commercialization of advanced devices, sensors, and systems used for
energy saving, high voltage switching, high temperature operation, high
frequency and high power amplification, photovoltaics and radiation
hard operation.
The conference aims to act as an international forum for the exchange
of ideas and opinions on recent scientific and technical issues among
researchers and engineers in academic, industrial and public sectors.
Topics
- Fundamentals
(theory and experiment)
- Bulk and
epitaxial growth
- New materials
grown on SiC
- Materials
characterization
- Surfaces and
interfaces
- Processing and
device fabrication
- Devices (power
switching, RF power, energy harvesting, high-temperature,
radiation-hard, sensors/detectors, MEMS)
- Device physics
(measurement, modeling, simulation, testing and reliability)
- Packing and
modular technology
- Circuits and
system applications
